IRFP460 N-Channel Power MOSFET – TO-247

Description

The IRFP460 N-Channel Power MOSFET is a high-performance transistor designed for high-power switching and amplification applications. With a drain-to-source voltage rating of 500V and a maximum current capacity of 20A, this MOSFET is an ideal solution for demanding systems such as power supplies, motor controllers, inverters, and industrial equipment.

Featuring low Rds(on) (resistance between drain and source), the IRFP460 offers minimal power loss and heat dissipation, ensuring high energy efficiency even under heavy loads. Its fast switching speed, driven by its MOSFET architecture, makes it suitable for high-frequency applications, allowing for rapid on-off cycling without excessive heat buildup. This makes it particularly valuable in high-voltage, high-current environments where efficiency and thermal management are critical.

Encased in a TO-247 package, the IRFP460 is designed for easy integration into various circuit designs, with robust construction to handle high temperatures and rigorous operational demands. Its high-speed switching capabilities combined with its low gate charge ensure efficient performance in applications such as DC-DC converters, solar inverters, and other power electronics.

For engineers and designers looking for a reliable and efficient power transistor, the IRFP460 N-Channel Power MOSFET provides excellent performance and durability in high-power applications.

IRFP460 N-Channel Power MOSFET Specifications:
N-channel power MOSFET
Drain-source breakdown voltage: 500V
Continuous drain current: 20A
Input capacitance: 4.2nF
Gate threshold: 2V to 4V
Available in TO-247 package

IRFP460 N-Channel Power MOSFET Applications
DC-DC converters
Motor drivers
Power amplifiers
Power switching

Datasheet: IRFP460 N-Channel Power MOSFET Datasheet