HY4008W N-Channel Enhancement Mode MOSFET TO-247-3L

Description

HY4008W is an N-Channel Enhancement Mode MOSFET, which is a type of field-effect transistor (FET) designed for electronic applications that require efficient switching and control of electrical signals.

Specifications

Rdson=2.8mohm, 100 percentage avalanche tested
Drain – source voltage – 80v
Continuous forward current – 200A
Continuous drain current – 200A – 800A
Maximum power dissipation – 199w – 397w
Type – To-247
Very Reliable and rugged

Datasheet: Download here