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Shelve No: M1
HY4008W is an N-Channel Enhancement Mode MOSFET, which is a type of field-effect transistor (FET) designed for electronic applications that require efficient switching and control of electrical signals.
Rdson=2.8mohm, 100 percentage avalanche tested
Drain – source voltage – 80v
Continuous forward current – 200A
Continuous drain current – 200A – 800A
Maximum power dissipation – 199w – 397w
Type – To-247
Very Reliable and rugged
Datasheet: Download here
| Weight | 9 g |
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