FGH40N65UFD 650V 80A IGBT – TO-247

Description

The FGH40N65UFD 650V 80A IGBT (Insulated Gate Bipolar Transistor) is a high-efficiency power transistor designed for switching applications that require both fast switching and high energy efficiency. Rated for 650V and 80A, this IGBT is an excellent choice for high-power systems, such as inverters, motor drives, power supplies, and induction heating.

This device combines the high-current handling capability of a bipolar transistor with the fast switching characteristics of a MOSFET, making it ideal for applications requiring both high voltage and high efficiency. The FGH40N65UFD features a low saturation voltage (Vce), ensuring minimal power loss and heat generation during operation, which increases system reliability and energy savings.

The Ultrafast Diode integrated into the design reduces switching losses and improves overall system efficiency, especially in high-frequency applications. It also features short-circuit protection, enhancing safety in demanding conditions. With an optimized design, it supports high-speed switching with reduced switching noise and heat buildup, further contributing to longevity and performance.

Encased in a TO-247 package, this IGBT is designed for ease of integration into high-power systems. For demanding applications that require fast, efficient switching with robust power handling, the FGH40N65UFD 650V 80A IGBT is a reliable, high-performance solution.